% sputtered energy : H -> B4C % z1= 1, m1= 1.01, z2= 5 (0.8), 6 (0.2), m2= 10.81, 12.01, sbe=5.73, 7.42 eV, # rho=2.51 g/cm**3 : trspvmc: sbe=5.90, 7.40 eV, rho=2.28 g/cm**3, ef=0.90 eV % ef=1.00 eV, esb=1.00 eV, kk0=kk0r=2, kdee1=kdee2=3, ipot=ipotr=1 (KrC), ca=1.00 % program: testvmcx, trspvmc % only low fluence ! % ne=12, na= 1 % # B # % e0 0 # 40 1.17e-5 50 5.10e-5 70 1.43e-4 100 2.45e-4 100 2.68e-4 200 3.10e-4 300 2.56e-4 333 2.45e-4 500 1.85e-4 1000 1.01e-4 1000 8.82e-5 2000 4.33e-5 # # C # 40 1.37e-6 50 7.62e-6 70 2.80e-5 100 5.89e-5 100 4.60e-5 200 5.81e-5 300 6.13e-5 333 6.24e-5 500 4.22e-5 1000 2.05e-5 1000 2.05e-5 2000 1.05e-5 # total yield # 40 1.31e-5 50 5.86e-5 70 1.71e-4 100 3.04e-4 100 3.14e-4 ! trspvmc 200 3.68e-4 300 3.17e-4 ! trspvmc 333 3.17e-4 ! trspvmc 500 2.27e-4 1000 1.22e-4 1000 1.09e-4 ! trspvmc 2000 5.38e-5 ! trspvmc