% sputtering yield : D -> Si
% z1= 1, m1=  2.01, z2=14, m2= 28.09, sbe=4.70, rho=2.32 g/cm**3
% ef=0.95 eV, esb=1.00 eV, kk0=kk0r=2, kdee1=kdee2=3, ipot=ipotr=1 (KrC)
% ca=1.00
% program : trspvmcx, IPP 9/82
% ne=10, na= 9
%
%   e0     0      15      30      45      55      65      75      80      85    
%
    25  1.90e-6 8.25e-3 1.11e-2 1.57e-2 1.87e-2 1.85e-2 1.08e-2 5.51e-3 2.51e-3
    27  2.82e-5
    30  1.52e-4 1.22e-2 1.69e-2 2.54e-2 3.25e-2 3.46e-2 2.07e-2 1.02e-2 3.82e-3
    50  3.09e-3 2.40e-2 3.45e-2 5.78e-2 8.53e-2 1.07e-1 7.40e-2 3.23e-2 7.37e-3
   100  1.15e-2 3.59e-2 5.42e-2 9.78e-2 1.49e-1 2.13e-1 2.00e-1 1.01e-1 1.27e-2
   200  2.03e-2 4.03e-2 6.32e-2 1.14e-1 1.77e-1 2.68e-1 3.42e-1 2.43e-1 2.93e-2
   500  2.48e-2 3.85e-2 5.82e-2 1.04e-1 1.59e-1 2.57e-1 4.08e-1 4.39e-1 1.38e-1
  1000  2.36e-2 2.96e-2 4.37e-2 7.80e-2 1.25e-1 2.06e-1 3.65e-1 4.59e-1 3.34e-1
  2000  1.96e-2
  5000  1.22e-2