% sputtering yield : D -> Si % z1= 1, m1= 2.01, z2=14, m2= 28.09, sbe=4.70, rho=2.32 g/cm**3 % ef=0.95 eV, esb=1.00 eV, kk0=kk0r=2, kdee1=kdee2=3, ipot=ipotr=1 (KrC) % ca=1.00 % program : trspvmcx, IPP 9/82 % ne=10, na= 9 % % e0 0 15 30 45 55 65 75 80 85 % 25 1.90e-6 8.25e-3 1.11e-2 1.57e-2 1.87e-2 1.85e-2 1.08e-2 5.51e-3 2.51e-3 27 2.82e-5 30 1.52e-4 1.22e-2 1.69e-2 2.54e-2 3.25e-2 3.46e-2 2.07e-2 1.02e-2 3.82e-3 50 3.09e-3 2.40e-2 3.45e-2 5.78e-2 8.53e-2 1.07e-1 7.40e-2 3.23e-2 7.37e-3 100 1.15e-2 3.59e-2 5.42e-2 9.78e-2 1.49e-1 2.13e-1 2.00e-1 1.01e-1 1.27e-2 200 2.03e-2 4.03e-2 6.32e-2 1.14e-1 1.77e-1 2.68e-1 3.42e-1 2.43e-1 2.93e-2 500 2.48e-2 3.85e-2 5.82e-2 1.04e-1 1.59e-1 2.57e-1 4.08e-1 4.39e-1 1.38e-1 1000 2.36e-2 2.96e-2 4.37e-2 7.80e-2 1.25e-1 2.06e-1 3.65e-1 4.59e-1 3.34e-1 2000 1.96e-2 5000 1.22e-2