% sputtering yield : He -> Si
% z1= 2, m1=  4.00, z2=14, m2= 28.09, sbe=4.70, rho=2.32 g/cm**3
% ef=0.50 eV, esb=0.00 eV, kk0=kk0r=2, kdee1=kdee2=3, ipot=ipotr=1 (KrC)
% ca=1.00
% program : trspvmcx, IPP 9/82
% ne= 6, na= 1
%
%   e0     0  
%
    50  1.64e-2
   100  4.43e-2
   300  8.77e-2
   500  1.01e-1
  1000  1.04e-1
  4000  8.08e-2