% sputtered energy : He -> Si
% z1= 2, m1=  4.00, z2=14, m2= 28.09, sbe=4.70, rho=2.32 g/cm**3
% ef=0.50 eV, esb=0.00 eV, kk0=kk0r=2, kdee1=kdee2=3, ipot=ipotr=1 (KrC)
% ca=1.00
% program : trspvmcx
% ne= 6, na= 1
%
%   e0     0  
%
    50  1.08e-3
   100  2.61e-3
   300  3.37e-3
   500  2.88e-3
  1000  1.99e-3
  4000  6.47e-4