% sputtering yield : H -> Si
% z1= 1, m1=  1.01, z2=14, m2= 28.09, sbe=4.70, rho=2.33 g/cm**3
% ef=0.95 eV, esb=1.00 eV, kk0=kk0r=2, kdee1=kdee2=3, ipot=ipotr=1 (KrC)
% ca=1.00
% program : trvmc95, IPP 9/82
% ne=11, na= 1
%
%   e0     0  
%
    50  5.23e-5
    60  3.60e-4
    70  8.90e-4
   100  2.40e-3
   200  7.60e-3
   300  9.57e-3
   500  1.10e-2
  1000  1.05e-2
  2000  9.00e-3
  5000  5.50e-3
 10000  3.60e-3