% sputtering yield : Ne -> Si % z1=10, m1= 20.18, z2=14, m2= 28.09, sbe=4.70, rho=2.32 g/cm**3 % ef=0.50 eV, esb=0.00 eV, kk0=kk0r=2, kdee1=kdee2=3, ipot=ipotr=1 (KrC) % ca=1.00 % program : IPP 9/82 % ne=12, na= 1 % % e0 0 % 30 7.60e-4 40 4.50e-3 50 1.15e-2 70 3.60e-2 100 8.00e-2 300 3.00e-1 1000 6.20e-1 3000 7.70e-1 10000 7.90e-1 30000 6.80e-1 100000 4.10e-1 300000 2.70e-1