% sputtering yield : Ne -> Si
% z1=10, m1= 20.18, z2=14, m2= 28.09, sbe=4.70, rho=2.32 g/cm**3
% ef=0.50 eV, esb=0.00 eV, kk0=kk0r=2, kdee1=kdee2=3, ipot=ipotr=1 (KrC)
% ca=1.00
% program : IPP 9/82
% ne=12, na= 1
%
%   e0     0  
%
    30  7.60e-4
    40  4.50e-3
    50  1.15e-2
    70  3.60e-2
   100  8.00e-2
   300  3.00e-1
  1000  6.20e-1
  3000  7.70e-1
 10000  7.90e-1
 30000  6.80e-1
100000  4.10e-1
300000  2.70e-1