% sputtering yield : Si -> Si
% z1=14, m1= 28.09, z2=14, m2= 28.09, sbe=4.70 eV, rho=2.32 g/cm**3
% ef=4.65 eV, esb=4.70 eV, ca=1.00, kk0=kk0r=2, kdee1=kdee2=3, ipot=ipotr=1 (KrC)
% program : trvmc, trvmc95, IPP 9/82
% ne=18, na= 9
%
%  e0      0      15      30      45      55      65      75      80      85
%
    30  4.70e-4
    40  2.00e-3
    50  1.40e-2
    70  3.80e-2
   100  6.20e-2
   300  3.00e-1
   500  4.40e-1 5.38e-1 8.43e-1 1.35e-0 1.76e-0 2.03e-0 1.69e-0 1.07e-0 3.50e-1
  1000  7.00e-1
  1000  4.60e-1
  2000  8.96e-1 1.02e-0 1.47e-0 2.32e-0 3.12e-0 3.97e-0 4.24e-0 3.52e-0 1.26e-0
  3000  9.60e-1
 10000  1.20e-0
 25000  1.13e-0
 30000  1.02e-0
 50000  1.09e-0
 75000  9.13e-1
100000  7.36e-1
100000  7.90e-1