% sputtering yield : Xe -> Si
% z1=54, m1=131.30, z2=14, m2= 28.09, sbe=4.70, rho=2.32 g/cm**3
% ef=0.50 eV, esb=0.00 eV, ca=1.00, kk0=kk0r=2, kdee1=kdee2=3, ipot=ipotr=1 (KrC)
% program : trspvmcx, IPP 9/82
% ne=18, na= 1
%
%   e0     0  
%
    50  3.54e-5
    50  4.00e-5
   100  3.84e-3
   100  3.65e-3
   200  4.83e-2
   300  1.14e-1
   500  2.56e-1
   500  2.74e-1
  1000  5.53e-1
  1000  5.84e-1
  2000  9.76e-1
  4000  1.48e-0
  5000  1.54e-0
 10000  2.09e-0
 20000  2.51e-0
 50000  2.99e-0
100000  3.13e-0
200000  3.10e-0