% sputtering yield : H -> U
% z1= 1, m1=  1.01, z2=92, m2=238.03, sbe=5.42 eV, rho=19.07 g/cm**3
% ef=0.95 eV, esb=1.00 eV, ca=1.00, kk0=kk0r=2, kdee1=kdee2=3, ipot=ipotr=1 (KrC)
% program : testvmcx, IPP 9/82
% ne= 1, na= 8
%
%  e0      0      30      45      60      70      80      85      87
%
  2000  4.13e-3 5.01e-3 5.78e-3 8.53e-3 1.24e-2 2.20e-2 2.38e-2 1.35e-2