% sputtering yield : Xe -> U
% z1=54, m1=131.30, z2=92, m2=238.03, sbe=5.42 eV, rho=19.07 g/cm**3
% ef=0.50 eV, esb=0.00 eV, ca=1.00, kk0=kk0r=2, kdee1=kdee2=3, ipot=ipotr=1 (KrC)
% program : IPP 9/82
% ne=12, na= 1
%
%  e0      0  
%
    50  6.30e-3
    70  3.26e-2
   100  1.01e-1
   200  3.72e-1
   300  6.33e-1
  1000  1.80e-0
  3000  3.41e-0
 10000  5.35e-0
 30000  7.58e-0
100000  8.62e-0
300000  8.98e-0
500000  8.13e-0
