Contents and Representation of Data

For most projectile - target combinations five kinds of numerical data are provided.

Sputtering yield (Y): number of sputtered atoms per projectile
Sputtered energy (Y_E): mean energy taken away by sputtered atoms per projectile energy
Particle reflection coefficients (R_N): fraction of backscattered projectiles (not implanted or transmitted)
Energy reflection coefficients (R_E): fraction of the incident energy carried by reflected projectiles
Mean range: average depths (10^-10 m) of implanted atoms

For some combinations, particle and energy transmission coefficients (T_N and T_E, respectively) are provided.

The mean energies of sputtered and reflected particles (E_sp and E_b, respectively) are given in general as the first moments of the sputtered and reflected energy distributions, respectively. Only for a given set of the energy (E₀) and the angle of incidence, the mean energies of the sputtered and reflected particles are expressed simply as,

E_sp=E₀Y_E/Y and E_b=E₀R_E/R_N, respectively.

Each kind of numerical data is presented in a separate table. The table is arranged in such a way that lines give an angular dependence of sputtering yields at a fixed incident energy, and columns give an energy dependence at a fixed angle of incidence. In special cases, this arrangement may be changed. For instance, in the case of the Maxwellian distribution of incidence, each line gives all of Y, Y_E, E_sp, R_N, R_E, E_b, and the mean range for a given ion temperature (kT in eV), and the data obtained using different types of the sheath potential (Vsh) are provided in separate tables. Abbreviations used in the tabels are listed HERE.